Product Introduction
Scientific research
Many members of the team are employed by the world's top equipment companies.
It holds the world's top position in equipment research and development as well as the application of core technologies
Cutting-edge technology, with over 20 years of experience in thin film deposition processes and equipment
Have experience in development and marketization
Technical features
The Angstrom ALD system takes high precision, high uniformity and wide material compatibility as its core advantages. The key technical parameters are as follows
Thickness control: Single-atom layer precision, precisely regulating the film thickness through the number of cycles (growth <1 nm per cycle).
Temperature range: Substrate heating temperature 25℃ to 450℃ (optional up to 650℃), compatible with low-temperature deposition requirements (such as biomedical coatings).
Sedimentary performance
Angstrom ALD
Precursor compatibility: 4, 6, or 8 selectable precursor source paths are available, with a source bottle capacity of 100cc. It supports temperature control from room temperature to 250℃ and is compatible with the deposition of materials such as oxides (Al₂O₃, HfO₂), nitrides (TiN, AlN), and metals (Pt, Cu).
Vacuum and carrier gas: Standard Alcatel mechanical pump, molecular pump or dry pump is available as options; The carrier gas supports nitrogen/argon to ensure the cleanliness of the reaction chamber.
Automation and Integration: Compatible with 100-level cleanroom environments, supports batch processing of multiple wafers (4 to 12 inches), compact equipment size (e.g. 950mm×700mm)
System configuration
Angstrom ALD
Oxides: Al₂O₃, TiO₂, HfO₂, ZnO, etc.
Nitrides: TiN, AlN, TaN, etc.
Metallic elements: Pt, Ru, Cu, Ni, etc.
Composite structure: gradient materials or doped systems such as AlTiNx and HfSiOx.
Material deposition range
Angstrom ALD
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